Flat Facetted PV concentrator systems and dichroic evolution TUTOR

نویسندگان

  • Giuliano Martinelli
  • Andrea Antonini
چکیده

τ e , τ h electron & hole minority carrier lifetimes respectively L e , L h electron & hole minority carrier diffusion lengths respectively µ e , µ h electron & hole mobilities respectively (cm 2 /V-sec) D e , D h electron & hole diffusivities respectively (cm 2 /sec) n e , n h the electron & hole concentrations respectively n e0 , n h0 electron & hole concentrations in thermal equilibrium n i intrinsic carrier concentration n ep0 electron concentration in p-type silicon at equilibrium n hn0 hole concentration in n-type silicon at equilibrium n ep , n en electron concentration in p-type and n-type silicon respectively n hn , n hp hole concentration in n-type and p-type silicon respectively n c , n v effective density of states in the conduction and valance bands respectively µ Fermi level E CB , E VB energy of the band edge of the conduction and valance bands respectively q electron charge (1.6x10

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تاریخ انتشار 2006